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| VTP Process Photodiodes VTP8350 PACKAGE DIMENSIONS inch (mm) CASE 11 CERAMIC CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy. These diodes exhibit low dark current under reverse bias and fast speed of response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20C to 75C -20C to 75C ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also VTP curves, page 46) VTP8350 SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR range p VBR 1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit Voltage VOC Temperature Coefficient Dark Current Shunt Resistance Junction Capacitance Responsivity Sensitivity Spectral Application Range Spectral Response - Peak Breakdown Voltage Angular Resp. - 50% Resp. Pt. Noise Equivalent Power Specific Detectivity 33 TEST CONDITIONS Min. H = 100 fc, 2850 K 2850 K H = 100 fc, 2850 K 2850 K H = 0, VR = 10 V H = 0, V = 10 mV H = 0, V = 3 V 940 nm @ Peak 400 925 140 60 1.8 x 10-13 (Typ.) 1.5 x 10 12 (Typ.) .06 .55 1150 100 50 65 Typ. 80 .20 350 -2.0 30 Max. A %/C mV mV/C nA G pF A/(W/cm2) A/W nm nm V Degrees W Hz cm Hz / W UNITS PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 61 |
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